Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector

Zhiyi Zhang; Bin Cheng; Jeremy LimAnyuan GaoLingyuan LyuTianjun CaoShuang WangZhu-An LiQingyun WuLay Kee AngYee Sin AngShi-Jun LiangFeng Miao

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Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector

机译：Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector

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Realizing both ultralow breakdown voltage and ultrahigh gain is one of themajor challenges in the development of high-performance avalanche photodetector.Here, it is reported that an ultrahigh avalanche gain of 3 × 10~5 canbe realized in the graphite/InSe Schottky photodetector at a breakdownvoltage down to 5.5 V. Remarkably, the threshold breakdown voltage canbe further reduced down to 1.8 V by raising the operating temperature,approaching the theoretical limit of 1.5 ε_g/e, with ε_g the bandgap of semiconductor.A 2D impact ionization model is developed and it is uncoveredthat observation of high gain at low breakdown voltage arises from reduceddimensionality of electron–phonon scattering in the layered InSe flake. Thesefindings open up a promising avenue for developing novel weak-light detectorswith low energy consumption and high sensitivity.

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《Advanced Materials》 |2022年第47期|2206196.1-2206196.7|共7页
作者
Zhiyi Zhang; Bin Cheng; Jeremy LimAnyuan GaoLingyuan LyuTianjun CaoShuang WangZhu-An LiQingyun WuLay Kee AngYee Sin AngShi-Jun LiangFeng Miao;
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Institute of Interdisciplinary Physical SciencesSchool of ScienceNanjing University of Science and TechnologyNanjing 210094, P. R. China;

Science, Mathematics and TechnologySingapore University of Technology and DesignSingapore 487372, Singapore;

National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093, P. R. ChinaNational Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093, P. R. China Physics DepartmentHarvey Mudd CollegeClaremont, CA 91711, USA;

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avalanche photodiodes; InSe; layered materials; van der Waals (vdW) Schottky junctions;

Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector

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