Hole transport enhancement by thickness- and composition-grading of electron blocking layer

Muhammad Usman; Munaza Munsif; Abdur-Rehman AnwarShahzeb MalikNoor U. IslamSibghatullah Khan

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Hole transport enhancement by thickness- and composition-grading of electron blocking layer

机译：Hole transport enhancement by thickness- and composition-grading of electron blocking layer

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摘要

We have numerically examined the advantages of thickness- and compositiongrading of the electron blocking layer (EBL) in InGaN multiquantum well light-emitting diodes. We have enhanced the hole confinement inside the active region, which is critical in GaN-based devices. Low hole injection is more severe when conventional wide bandgap AlGaN EBL is inserted between the last GaN quantum barrier and the p-GaN layer. The results obtained show reduced valence band offset leading to improved hole injection and enhanced device performance.

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来源
《Optical Engineering》 |2021年第3期|036101-1-036101-7|共7页
作者
Muhammad Usman; Munaza Munsif; Abdur-Rehman AnwarShahzeb MalikNoor U. IslamSibghatullah Khan;
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作者单位

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Faculty of Engineering Sciences, Topi, Khyber Pakhtunkhwa, Pakistan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类计量学;
关键词
InGaN; light-emitting diodes; efficiency; green; simulation;

Hole transport enhancement by thickness- and composition-grading of electron blocking layer

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