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On the damage behavior of dielectric films when illuminated with multiple femtosecond laser pulses

机译:On the damage behavior of dielectric films when illuminated with multiple femtosecond laser pulses

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摘要

The physical effects reducing the damage threshold of dielectric films when exposed to multiple femtosecond pulses are investigated. The measured temperature increase of a Ta_(2)O_(5) film scales exponentially with the pulse fluence. A polarized luminescence signal is observed that depends quadratically on the pulse fluence and is attributed to two-photon excitation of self-trapped excitons that form after band-to-band excitation. The damage fluence decreases with increasing pulse number, but is independent of the repetition rate from 1 Hz to 1 kHz at a constant pulse number. The repetition rate dependence of the breakdown threshold is also measured for TiO_(2), HfO_(2), Al_(2)O_(3), and SiO_(2) films. A theoretical model is presented that explains these findings.

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