High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer Pathway through Functional Perovskite Nanocrystals

Yanbo Gao; Yue Liu; Fujun ZhangXinyu BaoZehua XuXue BaiMin LuYanjie WuZhennan WuYe ZhangQuan WangXiujun GaoYinghui WangZhifeng ShiJunhua HuWilliam W. YuYu Zhang

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High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer Pathway through Functional Perovskite Nanocrystals

机译：High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer Pathway through Functional Perovskite Nanocrystals

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Quasi-2D perovskites have emerged as a promising luminescent material forperovskite light-emitting diodes (Pe-LEDs). However, efficiency and stabilityare still obstacles to practical application due to numerous defects and inefficientenergy transfer of perovskite films. Herein, functional phenethylammoniumbromine-modified CsPbBr_3 nanocrystals (PEA-CsPbBr_3 NCs) are firstintroduced as multifunctional additive to simultaneously improve abovementionedproblems. PEA-CsPbBr_3 NCs not only serve as heteronuclear seedsand trigger growth, thus greatly reducing leakage current, but also deliver Cs+and Br~? to passivate the intrinsic defects inside film. More importantly, thePEA-CsPbBr_3 construct a new carrier-transfer pathway from the small-n phaseof the quasi-2D perovskite to the PEA-CsPbBr_3, which not only accelerates theenergy-transfer process but also promotes radiation recombination of carriersdue to stronger quantum confinement effect. Afterward, the poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/poly9,9-dioctylfluoreneco-N-4-(3-methylpropyl)diphenylamine:black phosphorus quantum dot double holetransportlayer is successfully constructed to enhance its carrier-injectionand charge-transport abilities. Consequently, a champion external quantumefficiency of 25.32 and maximal brightness of 128 842 cd m~(?2) are achieved,which is the record efficiency of the quasi-2D Pe-LED with pure green emissionat 530 nm. Moreover, an impressive 174 min lifetime is obtained at T_(50),which is about five times longer than the control device.

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来源
《Advanced Materials》 |2022年第43期|2207445.1-2207445.10|共10页
作者
Yanbo Gao; Yue Liu; Fujun ZhangXinyu BaoZehua XuXue BaiMin LuYanjie WuZhennan WuYe ZhangQuan WangXiujun GaoYinghui WangZhifeng ShiJunhua HuWilliam W. YuYu Zhang;
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作者单位

State Key Laboratory of Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin University2699 Qianjin Street, Changchun 130012, P. R. China;

Femtosecond Laser LaboratoryState Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun 130012, P. R. China;

Key Laboratory of Materials Physics of Ministry of EducationDepartment of Physics and EngineeringZhengzhou UniversityZhengzhou 450052, P. R. ChinaState Centre for International Cooperation on DesignerLow-carbon & Environmental MaterialsSchool of Materials Science and EngineeringZhengzhou UniversityZhengzhou 450001, P. R. China;

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defect passivation; energy-transfer process; PEA-CsPbBr_3 NCs; quasi-2D perovskites; radiative recombination;

High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer Pathway through Functional Perovskite Nanocrystals

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