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首页> 外文期刊>Advanced energy materials >Tuning Intermediate Bands of Protective Coatings to Reach the Bulk-Recombination Limit of Stable Water-Oxidation GaP Photoanodes
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Tuning Intermediate Bands of Protective Coatings to Reach the Bulk-Recombination Limit of Stable Water-Oxidation GaP Photoanodes

机译：Tuning Intermediate Bands of Protective Coatings to Reach the Bulk-Recombination Limit of Stable Water-Oxidation GaP Photoanodes

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Stable photoelectrochemical solar fuel production requires protective coatingsto achieve effective charge separation, transport, and injection at thesemiconductor–liquid interfaces, implying that the coating should energeticallyalign its intermediate band (IB) with both the photoabsorber’s bandedge and co-catalyst’s potentials. Yet approaches to adjust coating IB positionsto accommodate various semiconductor light absorbers for constructingefficient and stable photoelectrodes have not been developed. Herein, threetypes of transition metal (M = Mn~(2+), Mn(3+）, and Cr~(3+） ions) alloyed TiO_2 coatingsare discovered using atomic layer deposition (ALD). The IB energetics ofthese coatings are characterized by X-ray photoelectron spectroscopy and arefound to be tunable inside the TiO_2 bandgap, through varying ALD growthconditions. By applying these coatings to n-type GaP and integrating withIrO_x co-catalysts, the water-oxidation J–E performance is comparable to anuncoated corroding GaP photoanode. It reaches the bulk recombination limitof the GaP and achieves ≈28 absorbed photon to current efficiency under475-nm light excitation (6.48 mW cm~(?2)) and 100-h stable water oxidation. Theoutstanding performance and stability are attributed to the efficient chargeseparation and hole transport, as allowed by the energy alignment of thecoating IB and the GaP valence band edge.

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