• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nano letters >Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption
【24h】

Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption

机译：Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

The metal-insulator transition (MIT) is normally assisted by certain external power input, such as temperature, pressure, strain, or doping. However, these may increase the disorder of the crystal or cause other effects, which makes device fabrication complicated and/or hinders large-scale application. Here, we adopt a new approach to obtain robust modulation of physical properties in magnetic semiconductor (Ga,Mn)As by surface molecular modification. We have probed both sides of the MIT with n-and p-type molecular doping. Density functional theory calculations are carried out to determine the stable absorption configuration and charge transfer mechanism of electron acceptor and donor molecules on the semiconductor surface. Both experimental and theoretical results confirm a remarkable modulation in carrier concentrations without introducing impurities or defects. This work points out the possibility of effectively tuning physical properties of solid-state materials by functional molecules, which is clean, flexible, nondestructive, and easily achieved.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号