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Terminal Atom-Controlled Etching of 2D-TMDs

机译:Terminal Atom-Controlled Etching of 2D-TMDs

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摘要

The controlled etching of 2D transition metal dichalcogenides (2D-TMDs) iscritical to understanding the growth mechanisms of 2D materials and patterning2D materials but remains a major comprehensive challenge. Here,a rational strategy to control the terminal atoms of 2D-TMDs etched holesis reported. Using laser irradiation combined with an improved anisotropicthermal etching process under a determined atmosphere, terminal atomcontrolledetched hole arrays are created on 2D-TMDs. By adjusting the gasatmosphere during the thermal etching stage, triangular etched hole arraysterminated by the tungsten zigzag (W-ZZ) edge (in an Ar/H_2 atmosphere),hexagonal etched hole arrays terminated alternately by the W-ZZ edge andsulfur (selenium) zigzag (S-ZZ or Se-ZZ) edge (in a pure Ar atmosphere), andtriangular etched hole arrays terminated by the S-ZZ (Se-ZZ) edge (in an Ar/sulfur selenium vapor atmosphere) can be obtained. Density functionaltheory reveals the forming energy of different edges and the different activitiesof metal atoms and chalcogenide atoms under different atmospheres,which determine the terminal atoms of the holes. This work may enhance theunderstanding of the etching and growth of 2D-TMDs. The 2D-TMDs holearrays constructed by this work may have important applications in catalysis,nonlinear optics, spintronics, and large-scale integrated circuits.

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