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机译:Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si_3N_4 gate and p-type buffer layer
School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China;
School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, Shandong, China;