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Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

机译：Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

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摘要

AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit greatpotential in phototherapy, vitamin D3 synthesis promotion, plant growthregulation, and so on. However, subjected to the excess compressive straininduced by the large lattice mismatch between multiple quantum wells (MQWs)and AlN, UVB-LEDs that simultaneously satisfy the requirements of high lightoutput power (LOP), low working voltage, and excellent stability are rarelyreported. Here, a substrate-dominated strain-modulation strategy is proposed.By precisely manipulating the strain in AlN grown on nano-patterned sapphiresubstrate (NPSS) to a slightly tensile one, the compressive strain in thefollowing Al_(0.55)Ga_(0.45)N underlayer and Al_(0.28)Ga_(0.72)N/Al_(0.45)Ga_(0.55)N MQWs issuccessfully suppressed. As a result, an outstanding UVB-LED with a peakwavelength at 303.6 nm is achieved. The 20 × 20 mil~2 UVB-LED chip shows awall-plug efficiency (WPE) of 3.27 under a forward current of 20 mA and ahigh LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forwardcurrent of 800 mA. It is more exciting that the LOP degradation is as low as 17after 1000 h operation under a forward current density of 75 A cm~(?2), showingexcellent stability. The here-developed UVB-LED, with a high LOP and excellentreliability, will definitely promote the applications of AlGaN-based UVB-LEDs.

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