机译:An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT
Brandenburg Univ Technol Cottbus Senftenberg, D-03046 Cottbus, Germany;
Ferdinand Braun Inst gGmbH, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany;
Brandenburg Univ Technol Cottbus Senftenberg, D-03046 Cottbus, Germany|Ferdinand Braun Inst gGmbH, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany;
GaN HEMTs modeling; drain lag; ASM-HEMT; physics-based models; microwave HEMTs; compact models;