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Single-Solution Doping Enabling Dominant Integer Charge Transfer for Synergistically Improved Carrier Concentration and Mobility in Donor–Acceptor Polymers

机译:Single-Solution Doping Enabling Dominant Integer Charge Transfer for Synergistically Improved Carrier Concentration and Mobility in Donor–Acceptor Polymers

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摘要

Chemical doping of donor-acceptor (D-A) polymers is essential for their usage in highly efficient optoelectronic devices. The crucial challenge remains to synergistically improve the carrier concentration and mobility of these polymers via a single solution doping method. Here, a D-A polymer, Pg(3)2T-OTz is designed and synthesized, containing a weak-acceptor-strong-donor backbone with nonpolar (alkoxy) and polar (ethylene glycol) side chains. Pure integer charge transfer (ICT) is shown to occur in 2,3,5,6-tetrafluoro-tetracyanoquinodimethane (F4TCNQ)-doped D-A polymer at a low doping level. It is shown that the ordered edge-on orientations of ICT structures overcome the Coulomb interactions and endow a long-range hole delocalization, while few charge transfer complex states form in amorphous regions and bridge the crystalline ICT structures at high doping level, creating a network that sustains efficient charge transport. As a result, simultaneously high carrier concentration and high mobility are realized for F4TCNQ-doped Pg(3)2T-OTz and thus a high electrical conductivity up to 550 S cm(-1) is approached, which is the highest value among any doped polymers via a single-solution doping process. This work demonstrates that the modulation of the acceptor strength combined with side-chain engineering is an effective molecular design strategy to promote both the doping efficiency and carrier transport property of D-A polymers.

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