Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

Maleki Sara; Haghighatzadeh Azadeh; Attarzadeh Amin

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Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

机译：Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

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Abstract This theoretical study addressed the first-order linear and third-order nonlinear optical features of GaAs/GaAsSb/GaAs V-shaped valence band quantum wells. The iterative solutions of the density matrix approach in the framework of a two-level system were used to investigate the changes in the optical absorption coefficients and refractive index. This study considered the influences of the electric field, the half-width of the well, and antimony content on the optical properties of the quantum well under intense laser fields. The first-order linear and third-order nonlinear optical responses were obtained under one-photon resonance conditions. Optical transitions appeared in Gaussian-like distributions and maximum-to-minimum schemes for linear optical absorption coefficients and refractive index changes, respectively. The nonlinear results revealed an inverse Gaussian-like and minimum-to-maximum scheme due to the negative contribution of nonlinear functions. Optical features exhibited a redshift along with an increase in the magnitude as a result of a decrease in the energy difference, and an increase in the overlap of the wavefunctions corresponding to the ground and the first-excited bound states with increasing intense laser fields. However, blueshifts and decreased magnitude were detected upon increasing the energy difference and decreasing the overlap when the electric field and the well half-width were enhanced. The results indicated that linear and third-order nonlinear optical properties remained constant due to the intent electronic characteristics by altering the antimony content.

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来源
《Optical and Quantum Electronics》 |2023年第6期|共5页
作者
Maleki Sara; Haghighatzadeh Azadeh; Attarzadeh Amin;
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作者单位

Islamic Azad University;

ACECR;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
GaAsSb; GaAs quantum well; Intervalence band optical transitions; Laser dressing; V-shaped potential; Third-order nonlinear optics;

Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

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