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首页> 外文期刊>Advanced functional materials >Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe_2/MoSe_2 Transistors with Modified Stack Interface
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Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe_2/MoSe_2 Transistors with Modified Stack Interface

机译：Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe_2/MoSe_2 Transistors with Modified Stack Interface

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2D semiconductor devices have been studied due to their unique potentialin architecture and properties. As one of the unique devices approaches, 2Dhetero-stack channel field-effect transistors (FETs) have recently been reported,but homo-stack FETs are rare to find. Here, MoSe_2/MoSe_2 homo-stack transistorsare rather fabricated for study. Unlike the equivalently-thick single MoSe2FET, homo-stack FETs show n-type memory behavior that originates fromstack interface-induced traps. Particularly, when their stack interfaces are engineeredby surface oxidation of bottom MoSe_2, more stable nonvolatile memorybehavior turns out. Short-term ultraviolet ozone (UVO)-induced oxidation onlyresults in n-type memory, but 15 min-long oxidation surprisingly enables bothn- and p-type nonvolatile memory behavior due to nm-thin MoO_x embeddedbetween upper and lower MoSe_2. Furthermore, by alternating gate voltagepulse to the 15 min-long UVO-treated FETs, channel polarity conversionappears reversible in a small gate voltage (V_(GS)) sweep range, which meansthat the channel type of a transistor can be reversibly modulated via stackinterface engineering. It is believed that homo-stack interface engineeringmust be one of the approaches to maximize the potential of 2D devices.

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