Digital Keying Enabled by Reconfigurable 2D Modulators

Sarbashis Das; Saptarshi Das

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Digital Keying Enabled by Reconfigurable 2D Modulators

机译：Digital Keying Enabled by Reconfigurable 2D Modulators

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Energy, area, and bandwidth efficient communication primitives are essentialto sustain the rapid increase in connectivity among internet-of-things (IoT)edge devices. While IoT edge-sensing, edge-computing, and edge-storage havewitnessed innovation in materials and devices, IoT edge communication isyet to experience such transformation. The aging silicon (Si)-based complementarymetal–oxide–semiconductor (CMOS) technology continues to remainthe mainstay of communication devices where they are used to implementamplitude, frequency, and phase shift keying (amplitude-shift keying ASK/frequency-shift keying FSK/phase-shift keying PSK). Keying allows digitalinformation to be communicated over a radio channel. While CMOS-basedkeying devices have evolved over the years, their hardware footprint and energyconsumption are major concerns for resource constrained IoT communication.Furthermore, separate circuit designs and hardware elements are needed foreach keying scheme and achieving multibit modulation to improve bandwidthefficiency remains a challenge. Here, a reconfigurable modulator is introducedthat exploits unique ambipolar transport and programmable Dirac voltage inultrathin MoTe_2 field-effect transistors to achieve ASK, FSK, and PSK modulation.Furthermore, by integrating two programmed MoTe_2 field-effect transistors,multibit data modulation is demonstrated, which improves the bandwidthefficiency by 200. Finally, a frequency quadrupler is also realized exploitingthe unique “double-well” transfer characteristic.

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来源
《Advanced Materials》 |2022年第43期|2203753.1-2203753.9|共9页
作者
Sarbashis Das; Saptarshi Das;
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作者单位

Electrical EngineeringPennsylvania State UniversityUniversity Park, PA 16802, USA, Engineering Science and MechanicsPennsylvania State UniversityUniversity Park, PA 16802, USA, Material Research InstitutePennsylvania State UniversityUniversity Park, PA 16;

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正文语种英语
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ambipolar transport; digital modulators; double-well characteristics; MoTe_2 field-effect transistors;

Digital Keying Enabled by Reconfigurable 2D Modulators

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