Single-crystal films of Si1 - Ge-x(x) (0 < x < 1) solid solution have been grown on Si substrates by liquid-phase epitaxy, and a Si-Si1-xGex-GaAs heterostructure was fabricated based on them. The dislocation density at the substrate-film interface, along the growth direction of Si1 - Ge-x(x) solid solutions grown under different technological conditions, as well as the chemical composition of the surface and film chipping were studied. Optimal technological modes for growing perfect crystalline epitaxial layers and structures are reported.
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