机译:Out-of-Plane Resistance Switching of 2D Bi_2O_2Se at the Nanoscale
Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China|Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China|Foshan Univ, Sch Elect & Informat Engn, Foshan 52800;
Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China|Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China;
2D materials; Bi; O-2; Se-2; nanoscale electrical property; out-of-plane resistance switching; unipolar conduction window;