机译:Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra
Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea|Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea;
Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea;
Korea Inst Adv Study KIAS, Sch Phys, Seoul 02455, South Korea;
1; f noise scaling; organometal perovskite memory devices; percolation; random telegraph noise; unipolar resistive memory devices;