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Plasmonic InAs quantum dot MSM nanolaser with low threshold gain

机译:Plasmonic InAs quantum dot MSM nanolaser with low threshold gain

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Abstract This work presented a numerical model for calculating threshold material gain in a plasmonic quantum dot (QD) nanolaser based on the group index. The presence of the silver (Ag) metal in the structure makes the valence band Fermi energy deepen. Then, for the plasmonic QD nanolaser (compared to conventional QD laser), the refractive index value doubles while the group velocity is lower by half. The quality factor is increased where high energy can be stored in the cavity. The threshold gain value lowers the material gain by more than ten orders. A comparison with experimental results predicts the possibility of high power applications for this structure.

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