Growth Mechanism of L1(0)-Ordered FePt Epitaxial Thin Film

Futamoto Masaaki; Nakamura Masahiro; Shimizu TomokiOhtake MitsuruShimotsu Teruho

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Growth Mechanism of L1(0)-Ordered FePt Epitaxial Thin Film

机译：Growth Mechanism of L1(0)-Ordered FePt Epitaxial Thin Film

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Atomic-level structures are investigated by high-resolution transmission electron microscopy (TEM) for 10 nm thick L1(0)-FePt thin films formed on MgO(001) substrate prepared under different conditions. TEM observation has shown that the lattice mismatch with MgO(9) is decreased greatly by an introduction of misfit dislocation and by lattice bending in FePt material and that such disturbance in FePt crystal lattice is limited within a short distance of less than 2 nm from the MgO interface. Crystal lattice expansion in the lateral direction is recognized in an A1-FePt epitaxial film prepared at 200 degrees C through the lattice-level analysis of high-resolution TEM image. The lateral in-plane strain in FePt material associated with several factors, substrate, cap layer, and film morphology, is considered to have given a strong influence in promoting the growth of L1(0)-FePt(001) crystal and enhancing L1(0) ordering.

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来源
《IEEE Transactions on Magnetics》 |2018年第1期|2100804-1-2100804-4|共4页
作者
Futamoto Masaaki; Nakamura Masahiro; Shimizu TomokiOhtake MitsuruShimotsu Teruho;
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作者单位

Chuo Univ, Fac Sci & Engn, Tokyo 1128551, Japan;

Hitachi Power Solut, Hitachinaka, Ibaraki 3128507, Japan;

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原文格式 PDF
正文语种英语
中图分类电工技术;
关键词
C-axis; FePt thin film; film morphology; L1(0)-ordered phase; lateral strain; variant structure;

Growth Mechanism of L1(0)-Ordered FePt Epitaxial Thin Film

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