Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

Late DJ; Ghosh A; Subrahmanyam KSPanchakarla LSKrupanidhi SBRao CNR

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Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

机译：Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

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摘要

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.

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来源
《Solid State Communications》 |2010年第16期|734-738|共5页
作者
Late DJ; Ghosh A; Subrahmanyam KSPanchakarla LSKrupanidhi SBRao CNR;
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作者单位

Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India.;

Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India.;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
Graphene; Field-effect transistor; Mobility; Doping;

Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

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