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Achievements and Challenges of Graphene Chemical Vapor Deposition Growth

机译：Achievements and Challenges of Graphene Chemical Vapor Deposition Growth

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摘要

Graphene, since the first successful exfoliation of graphite, has continuouslyattracted attention due to its remarkable properties and applications.Recently, the research focus on graphene synthesis has been directed tothe controllable synthesis of large-area and high-quality graphene. In thelast decade, there has been great progress in the chemical vapor deposition(CVD) growth of graphene. Theoretical investigations have led to anenhanced understanding of puzzles on hydrocarbon species stability, keyreaction pathways, the role of hydrogen gas, the morphology of grapheneislands, and the alignment of graphene on substrates. Experimentally, highqualitygraphene is epitaxially grown on both insulating and metal substrates.Progress has also been reported on low-temperature graphene growth andon controlling the thickness and stacking of graphene layers. In this review,the authors summarize the previous theoretical and experimental studies ongraphene CVD growth and discuss the future challenges on the growth ofgraphene ⅰ) on insulating substrates, ⅱ) at low temperature, ⅲ) with controllablethickness, and ⅳ) with selected stacking twist angles. The authorsassert that the key to the continuous advancement of graphene growth is thesynergy of experimental and theoretical investigations.

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