Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region

Ma YT.; Yu ZP.; Li ZJ.Liu LT.

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Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region

机译：Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region

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Threshold voltage shift due to quantum mechanical effects (QMEs) are studied for both n- and p-MOS structure in the paper. Subband structure and carrier distribution are formulated for both type of MOS structure in effective mass approximation. QMEs on threshold voltage shift are thoroughly analyzed based on the model. Carrier distribution in subbands for both n-MOS and p-MOS are calculated and analyzed from density-of-states point of view. Model results for n- and p-MOS structure are compared with experimental and full-band self-consistent calculation results and show good coincidence. It is proved that at least in threshold region, effective mass approximation has similar accuracy as the full-band self-consistent method to predict the influence of QMEs MOS structure characteristics. (C) 2000 Elsevier Science Ltd. All rights reserved. References: 10

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来源
《Microelectronics journal》 |2000年第12期|913-921|共9页
作者
Ma YT.; Yu ZP.; Li ZJ.Liu LT.;
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作者单位

Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China, .;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类微电子学、集成电路（IC）;
关键词
Mos structure; Threshold voltage; Qmes; Model; Quantization; Transistor; Electron; Mobility; Voltage;

Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region

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