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Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

机译：Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

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摘要

We demonstrate a top-gated field effect transistor made of a reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. The Raman spectrum of RGO flakes of typical size of 5μm×5μm shows a single 2D band at 2687 cm~(-1), characteristic of single-layer graphene. The two-probe currentvoltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 μm using ac dielectrophoresis, show ohmic behavior with a resistance of ～37kω. The temperature dependence of the resistance (R) of RGO measured between 305 K and 393 K yields a temperature coefficient of resistance dR/dTR～-9.5×10~(-4)/K, the same as that of mechanically exfoliated single-layer graphene. The field-effect transistor action was obtained by electrochemical top-gating using a solid polymer electrolyte (PEO+LiClO_4) and Pt wire. The ambipolar nature of graphene flakes is observed up to a doping level of ～6×10~(12)/cm~2 and carrier mobility of ～50 cm~2/V s. The sourcedrain current characteristics show a tendency of current saturation at high sourcedrain voltage which is analyzed quantitatively by a diffusive transport model.

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