Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

Wang CF.; Tsai DS.

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Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

机译：Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

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摘要

The deposition of silicon carbide thin film on Si (1 0 0) wafer, using low pressure CVD of SiH2Cl2/C2H2/H-2 reaction system, is investigated. The SiC film deposited at 1023 K is amorphous, 1073 K is microcrystalline, and 1173 K is (1 1 0) preferentially oriented. The deposition rate increases significantly with temperature. Deposition kinetics of surface and gas-phase paths is separated by varying the volume/surface ratio of deposition environment. The activation energy for gas-phase reaction path is estimated to be 76 kcal/mol, and that for surface reaction path is 71 kcal/mol. The experimental barrier for gas-phase reaction path is close to the values by ab initio calculation (Su and Schlegel), which range from 73 to 76 kcal/mol for the step of Hz elimination from SiH2Cl2. (C) 2000 Elsevier Science S.A. All rights reserved. References: 25

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来源
《Materials Chemistry and Physics》 |2000年第3期|196-201|共6页
作者
Wang CF.; Tsai DS.;
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作者单位

Natl Taiwan Univ Sci & Technol, Ctr Mat Sci & Technol, Dept Chem Engn, Taipei, Taiwan, .;

Uniquema, Gouda, The Netherlands;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Silicon carbide; Chemical vapor deposition; Deposition kinetics; Dichlorosilane; Acetylene; Thermal-decomposition; Reaction system; Growth; Gas; Films; Methyltrichlorosilane; Precursors; Pyrolysis; Mechanism; Sih2cl2;

Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene

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