Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

Croitoru MD; Gladilin VN; Fomin VMDevreese JTMagnus WSchoenmaker WSoree B

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Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

机译：Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

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摘要

Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I-V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.

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来源
《Solid State Communications》 |2008年第2期|31-35|共5页
作者
Croitoru MD; Gladilin VN; Fomin VMDevreese JTMagnus WSchoenmaker WSoree B;
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作者单位

Univ Antwerp, Dept Fys, EMAT, B-2020 Antwerp, Belgium.;

Univ Antwerp, Dept Fys, TFVS, B-2020 Antwerp, Belgium.;

Univ Antwerp, Dept Fys, TGM, B-2020 Antwerp, Belgium.MAGWEL, B-3000 Louvain, Belgium.;

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正文语种英语
中图分类固体物理学;
关键词
nanostructures; electronic transport;

Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I-V characteristics

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