AbstractCircuit models for bothlong‐baseandshort‐base p‐njunction diodes which are valid for non‐linear high‐speed and high‐frequency operations are presented. the diode model consists of a parallel connection of higher‐orderdynamicelements and includes the conventional diffusion model as a special case. the new dynamic model can be used for simulating arbitraryp‐njunction diode circuits under all operating conditions. In particular, it is capable of simulating realistically the diode's reverse transient behaviour and providing an increasingly accurate approximation to the diffusion equation as the order of the model gets higher. the model is also shown to be capable of reproducing thefrequency‐dependentsmall‐signal characteristics ofp‐njunction diodes.The model is based mainly upon the device's physical operating principles. Perhaps the most significant implication of the model is the fact that it illustrates the important roles played by higher‐order and dynamic elements in highspeed and high‐frequency no
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