Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

X. D. Wang; W. D. Hu; X. S. ChenJ. T. XuX. Y. LiW. Lu

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Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

机译：Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

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摘要

The spectral responsivity characteristics have been numerically studied for visible blind GaN/AlGaN p-i-n ultraviolet detector. The effects of the absorption layer and the n-layer thicknesses on the photoresponse have been investigated. It is shown that the absorption layer and n-layer thicknesses have notable impacts on the peak value of photoresponse and the rejection ratio of short-wavelength side, respectively. Finally, the effect of doping concentration of the absorption layer on photoresponse is discussed in detail. It is demonstrated that mobility degradation, Radiative and Auger recombinations are jointly responsible for the decrease of photoresponse with increasing doping concentration of the absorption layer.

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来源
《Optical and Quantum Electronics》 |2010年第13期|755-764|共10页
作者
X. D. Wang; W. D. Hu; X. S. ChenJ. T. XuX. Y. LiW. Lu;
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作者单位

State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Science, 200083 Shanghai, China;

National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science,500 Yu Tian Road, 200083 Shanghai, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Keywords Visible blind; GaN-based ultraviolet photodetector; Photoresponse; Rejection ratio;

Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

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