High-temperature in situ structural investigation on lead feldspar

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High-temperature in situ structural investigation on lead feldspar

机译：High-temperature in situ structural investigation on lead feldspar

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Single-crystal X-ray diffraction was performed in situ at T = 20, 230, 465, and 700 °C on a partially ordered lead feldspar (PbAl 2 Si 2 O 8 , I2/c, a = 8.402, b = 13.043, c = 14.308 Å , b = 115.308, V = 1417.6 Å 3 ; Q od = 0.71). The unit-cell expansion (1.26 × 10 -5 °C -1 ) is close to that observed for other feldspars, sanidine in particular, and occurs predominantly along a*. The electron-density at the Pb site evolves with temperature toward a bean-like configuration close to that observed in disordered lead feldspar. The average Pb position approaches the c-glide plane with increasing temperature. Consequently the intensity of the b-type reflections reduces dramatically without evidence of an increase of Al-Si disorder. The evolution of atomic displacement parameters of the Pb atom with temperature supports the view that at room temperature Pb shows considerable positional disorder. Dark-field in situ TEM observations show that b antiphase domains (APD) persist unchanged in shape and size up to T = 690 °C. No diffuse component appears in b-type reflections in SAD patterns up to 935 °C, showing that the above changes in the Pb configuration do not affect the APD. The results suggest that, at T 700 °C, Pb reaches the glide plane assuming a configuration that may favor the Al-Si disorder.

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《The American mineralogist》 |1999年第2期|120-129|共10页
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Dipartimento di Scienze Mineralogiche e Petrologiche, Via Valperga Caluso 35, I-10125 Torino, Italy;

Centro di Studi sulla Geodinamica delle Catene Collisionali (C.N.R.), Via Accademia delle Scienze 5, I-10123 Torino, Italy;

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High-temperature in situ structural investigation on lead feldspar

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