Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures

Liu C.; He H.; Sun L.Yang Q.Ye Z.Chen L.

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Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures

机译：Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures

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The origin of the 3.31-eV emission in ZnO materials is still controversial so far. We report the 3.31-eV emission in In-doped ZnO nanostructures. A direct correlation between the intensity of the 3.31-eV peak and the In content is observed in both the photoluminescence (PL) and PL excitation spectra. Temperature-dependent PL reveals that the 3.31-eV emission at low temperatures is due to donoracceptor pair recombination, with an acceptor level of 114 meV. We suggest that such an acceptor level is likely related to stacking faults induced by In doping.

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来源
《Solid State Communications》 |2010年第48期|2303-2305|共3页
作者
Liu C.; He H.; Sun L.Yang Q.Ye Z.Chen L.;
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作者单位

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang Universitéy, Hangzhou 310027, China;

Institute of Materials Research and Engineering (IMRE), Singapore 117602, Singapore;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
A. Nanostructures; A. Semiconductors; D. Photoluminescence;

Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures

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