The author presents a review of numerical methods for modelling the electronic properties of quantum nanostructure devices. The appropriate boundary conditions for solving the Poisson and Schrodinger equations in modeling the self-consistent screening potential and electron states are emphasised. Besides providing a framework for understanding the physics of nanoscale structures, realistic computer modeling constitutes a valuable tool for designing quantum devices that the author argues enables the development of a nanoelectronic technology along with the associated advances in fabrication technologies. Nanoelectronic devices make use of the quantized energy levels of confined electrons to control the flow of charge. The potential energy environment that gives rise to such levels is, however, a strongly sensitive function of the geometry and layer properties of the device structure. The relevant device variables must therefore be rather precisely specified, and the most cost-efficient means of developing realistic designs is to use modeling tools that are based on fundamental physical laws.
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