The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates

Lee KH; Lee JY; Kwon YHRyu SYKang TWJung HYPark SHLee DUKim TW

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The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates

机译：The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates

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An X-ray diffraction pattern (XRD) showed that GaN nanorods grown on Si(111) substrates were preferentially oriented along the 0001 direction. The transmission electron microscopy (TEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of (1100) and 01021 planes. The disordered nuclei of the GaN nanorods produced a two-dimensional thin-film layer near the GaN/Si(111) interfacial region. The relation between the microstructural properties and the geometry factors of the tip region for GaN nanorods formed on Si(111) substrates is described on the basis of the XRD and TEM results.

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来源
《Solid State Communications》 |2010年第14期|636-639|共4页
作者
Lee KH; Lee JY; Kwon YHRyu SYKang TWJung HYPark SHLee DUKim TW;
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作者单位

Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea;

Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pildong, Chungku, Seoul 100-715, Republic of Korea;

National Research Laboratory for Nano Quantum Electronics, Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong,Seongdong-gu, Seoul 133-791, Republic of Korea;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
Disordered system; Surface and interfaces; Nanostructures; Scanning and transmission electronmicroscopy;

The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates

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