The electrical resistivity rho of V3O5 was measured at pressures to 10 GPa in the temperature range 4.2-500 K. The semiconductor-metal transition (T-c = 428 K at normal pressure) shifts to lower temperatures at high pressure, and for similar to 4 less than or equal to P less than or equal to 9 GPa, there are two successive resistive transitions. The stability range of an intermediate phase at 6 GPa, 300 K extends over few Kelvin and systematically expands on further pressure increase. Both transitions are completely suppressed at pressures of 8-9 GPa and the ground state is metallic. The electrical resistivity of the pressure-induced metallic state of V3O5 shows features typical of heavy fermion compounds: a pronounced maximum in p(T) below 100 K and a large T-2 coefficient of the low temperature resistivity. (C) 2003 Published by Elsevier Science Ltd. References: 32
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