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Quantum engineering of nanoelectronic devices: the role of quantum emission in limiting drift velocity and diffusion coefficient

机译：Quantum engineering of nanoelectronic devices: the role of quantum emission in limiting drift velocity and diffusion coefficient

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摘要

Quantum emission is possible when an electron, after traversing an inelastic scattering length, emits a quantum of energy. Diffusive and drift electron transport in a semiconductor subjected to an applied electric field is evaluated using a steady-state asymmetric distribution function that takes into account quantum-emission-induced modification of the mean free path. The drift velocity of an electron is shown to be limited to the thermal velocity and diffusion coefficient unaffected in the absence of quantum emission. However, a presence of quantum emission in a high electric field lowers the saturation velocity and diffusion coefficient. Transport parameters in the ohmic regime remain unaffected owing to complete absence of quantum emission. In the model presented, the saturation velocity does not sensitively depend upon the momentum-randomizing scattering events that control the mobility. As a result of deviation from the linear velocity-field characteristics, the electron mobility is degraded. The Einstein ratio of the diffusion coefficient to mobility is then considerably enhanced and more so under ac conditions. An alternative description of this enhancement in terms of a hot electron temperature, both under ac and de conditions, is also given. (C) 2000 Elsevier Science Ltd. All rights reserved. References: 24

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