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机译:The influence of strong electric field on the interface in the Al-SiO2-n-Si Auger transistor
Russian Acad Sci, AF Ioffe Phys Tech Inst, 26 Polytekhnicheskaja, St Petersburg 194021, Russia.;
Auger transistor; Impact ionisation; Hot electrons; Self-consistent quantum wells; Field emission; Tips; Strong electric field; Semiconductors; Emission;