Quantum Hall activation gaps in bilayer graphene

Kurganova E.V.; Giesbers A.J.M.; Gorbachev R.V.Geim A.K.Novoselov K.S.Maan J.C.Zeitler U.

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Quantum Hall activation gaps in bilayer graphene

机译：Quantum Hall activation gaps in bilayer graphene

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We have measured the quantum Hall activation gaps in bilayer graphene at filling factors ν=±4 and ν=±8 in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.

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来源
《Solid State Communications》 |2010年第46期|2209-2211|共3页
作者
Kurganova E.V.; Giesbers A.J.M.; Gorbachev R.V.Geim A.K.Novoselov K.S.Maan J.C.Zeitler U.;
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作者单位

High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, Netherlands;

School of Physics and Astronomy, University of Manchester, M13 9PL Manchester, United Kingdom;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
A. Bilayer graphene; D. Landau levels; D. Quantum Hall effect;

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Quantum Hall activation gaps in bilayer graphene

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