Growth and optical properties of nanocrystalline Ga_(0.81)In_(0.19)Sb embedded in silica film

Fa-Min Liu; Tian-Min Wang; Li-De Zhang

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Growth and optical properties of nanocrystalline Ga_(0.81)In_(0.19)Sb embedded in silica film

机译：Growth and optical properties of nanocrystalline Ga_(0.81)In_(0.19)Sb embedded in silica film

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摘要

Nanocrystalline Ga_(0.81)In_(0.19)Sb embedded in silica film was grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) strongly support the existence of nanocrystalline Ga_(0.81)In_(0.19)Sb in the silica film. X-ray photoelectron spectroscopy further shows that the strong affinity of Si with oxygen produces a silicon dioxide layer wrapping the nanoparticles of the Ga_(0.62)In_(0.38)Sb. The room temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 3.38 eV compared with that of the bulk semiconductor, suggesting the existence a of quantum confinement effect.

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来源
《Materials Letters》 |2002年第3期|156-160|共5页
作者
Fa-Min Liu; Tian-Min Wang; Li-De Zhang;
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作者单位

Center for Material Physics and Chemistry, School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, People's Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Nanocrystalline Ga_(0.81)In_(0.19)Sb; Optical properties; Quantum confinement effect;

Growth and optical properties of nanocrystalline Ga_(0.81)In_(0.19)Sb embedded in silica film

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