High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

Mishra J.K.; Dhar S.; Brandt O.

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High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

机译：High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

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摘要

Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7×10 ~(15) to 8.5×10~(18) cm~(-3). Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7×10~(15) cm~(-3) is estimated to be as high as ≈10~(19) cm~(-3). The defect state is found to be located ≈450 meV away from the band edge.

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《Solid State Communications》 |2010年第48期|2370-2373|共4页
作者
Mishra J.K.; Dhar S.; Brandt O.;
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作者单位

Physics Department, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;

Paul-Drude-Institut Fr Festkrperelektronik, Hausvogteiplatz 57, 10117 Berlin, Germany;

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正文语种英语
中图分类固体物理学;
关键词
A. Semiconductors; B. Epitaxy; C. Points defects; D. Photoconductivity and photovoltaics;

High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

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