Defect-induced strong ferromagnetism in Cr-doped In2O3 from first-principles theory

Huang LM; Silvearv F; Araujo CMAhuja R

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Defect-induced strong ferromagnetism in Cr-doped In2O3 from first-principles theory

机译：Defect-induced strong ferromagnetism in Cr-doped In2O3 from first-principles theory

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We demonstrate by means of first-principles calculations that the high Curie temperature observed in Cr-doped In2O3 is mediated by intrinsic p-type defects, namely In vacancies or O interstitials. Charge transfer from Cr 3d states to the hole states formed by these defects makes Cr ions in the mixed valence state, giving rise to a strong ferromagnetic coupling. Calculated formation energies of various defects also show that doping Cr in In2O3 could greatly lower the formation energies of p-type intrinsic defects even in oxygen-deficient growth conditions. These results advance our understanding of the underlying physics of diluted magnetic oxides.

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来源
《Solid State Communications》 |2010年第14期|663-665|共3页
作者
Huang LM; Silvearv F; Araujo CMAhuja R;
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作者单位

Condensed Matter Theory Group, Department of Physics and Materials Science, Uppsala University, BOX 530, S-751 21, Uppsala, Sweden;

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正文语种英语
中图分类固体物理学;
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Semiconductors; Impurities in semiconductors; Electronic band structure;

Defect-induced strong ferromagnetism in Cr-doped In2O3 from first-principles theory

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