Quantum nanoelectronic devices are a new class of devices, still under development, which operate by fully utilizing an electron's quantum-mechanical behavior at very small length scales. These devices are highly promising technologically, offering the prospect of continued miniaturization beyond the limiting length scales set by conventional devices. A review is given of theoretical models for nanoelectronic devices. Whereas modeling conventional devices is relatively well developed, incorporating quantum mechanics into device models is not. The authors argue that a spectrum of modeling tools of varying degrees of sophistication is required to meet the needs of the various stages of quantum device development. They review the applicability of: firstly, finite-temperature Thomas-Fermi theory to such quantum devices as resonant tunneling diodes, resonant tunneling transistors and quantum dot nanostructures; and secondly, the Wigner distribution function to resonant tunneling diodes.
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