Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

Kim TW.; Choo DC.; Lim YS.Lee HS.Lee JY.Lim H.Lee DU.

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Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

机译：Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

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Transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures near the ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells. The high-resolution TEM micrographs and selective-area electron-diffraction patterns showed a CuPt-type ordered structure and a Cu3Au-type ordered structure near the ZnTe/ZnSe heterointerfaces in ZnxCd1-yTe/ZnSySe1-y quantum wells. The present results can help improve understanding for the appli cation of ZnxCd1-xTe/ZnSySe1-y quantum wells in optoelectronic devices in the blue-green spectral region. (C) 2001 Elsevier Science Ltd. All rights reserved. References: 15

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《Solid State Communications》 |2000年第8期|501-504|共4页
作者
Kim TW.; Choo DC.; Lim YS.Lee HS.Lee JY.Lim H.Lee DU.;
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作者单位

Kwangwoon Univ, Dept Phys, Nowon Ku, 447-1 Wolgye Dong, Seoul 139701, South Korea.;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
Quantum wells; Scanning and transmission electron microscopy; Order-disorder effects; P-type znse; Laser-diodes; Interface; Epitaxy;

Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

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