Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics

Lee  JW; Ham  MH; Myoung  JM

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Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics

机译：Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics

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The high dielectric constant layer, Si3N4, was applied to the GaN nanowire devices. Single-crystalline wurtzite GaN nanowires prepared by the vapor-liquid-solid method were utilized to fabricate GaN nanowire field-effect transistor structures with Si3N4 and SiO2 dielectric layers in order to investigate the effect of a high-k dielectric layer on the electrical characteristics of the GaN nanowires. By applying high-k gate dielectrics to GaN nanowire devices, higher drain current, lower subthreshold swing, and threshold voltage shift were obtained in spite of the slight degradation of the channel mobility due to the surface phonon scattering and the electrical scattering at fixed charges and trapped charges. (C) 2007 Elsevier Ltd. All rights reserved.

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来源
《Solid State Communications》 |2008年第8期|327-331|共5页
作者
Lee JW; Ham MH; Myoung JM;
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作者单位

Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea;

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正文语种英语
中图分类固体物理学;
关键词
GaN nanowire; high-k dielectric layer; Si3N4; electrical transport; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; NITRIDE; PERFORMANCE; CAPACITANCE; LAYER; TA2O5;

Gate-controlled transport in GaN nanowire devices with high-k Si3N4 gate dielectrics

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