Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate

Ng  SS; Hassan  Z; Abu Hassan  H

首页> 外文期刊>Solid State Communications >Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate

【24h】

Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate

机译：Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相关主题

摘要

In this paper, surface phonon polariton (SPP) of wurtzite structure gallium nitride (GaN) thin film grown on c-plane sapphire (Al2O3) substrate is investigated by means of p-polarized infrared attenuated total reflection (ATR) spectroscopy. The result showed that GaN exhibits a prominent SPP absorption peak with an asymmetric line shape at 697.5 cm(-1). An additional weak and broad peak which corresponds to the longitudinal-optic (LO) phonon mode of GaN has also been observed. Besides that, no signature due to the SPP as well as the bulk polariton modes of the Al2O3 substrate can be detected from the ATR spectrum. The obtained experimental SPP mode of the GaN thin film is compared with the theoretical result derived by means of an anisotropy model. A reasonable agreement with an uncertainty of about 1 is obtained. (C) 2008 Elsevier Ltd. All rights reserved.

著录项

来源
《Solid State Communications》 |2008年第12期|535-538|共4页
作者
Ng SS; Hassan Z; Abu Hassan H;
展开▼
作者单位

Univ Sains Malaysia, Sch Phys, George Town, Malaysia;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
gallium nitride; thin films; surface phonon polariton; attenuated total reflection spectroscopy; ATTENUATED-TOTAL-REFLECTION; RAMAN-SCATTERING; BLUE;

Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate

摘要

著录项

相关主题

期刊订阅