Probing the onset of strong localization and electronelectron interactions with the presence of a direct insulatorquantum Hall transition

著录项

• 来源
  《Solid State Communications》 |2010年第40期|1902-1905|共4页
• 作者

  Lo S.-T.; Chen K.Y.; Lin T.L.Lin L.-H.Luo D.-S.Ochiai Y.Aoki N.Wang Y.-T.Peng Z.F.Lin Y.Chen J.C.Lin S.-D.Huang C.F.Liang C.-T.;

  展开▼
• 作者单位

  Department of Physics, National Taiwan University, Taipei 106, Taiwan;

  Department of Applied Physics, National Chiayi University, Chiayi 600, Taiwan;

  Department of Physics, National Tsinghwa University, Hsinchu 300, TaiwanGraduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu 300, TaiwanNational Measurement Laboratory, Centre for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 英语
• 中图分类 固体物理学;
• 关键词

  A. Semiconductor; B. Epitaxy; D. Electronelectron interactions; D. Quantum Hall effect;