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>Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films
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Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films
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机译：Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films
A practical thermal oxidation system used in ultradry, ultrathin silicon oxide film growth is described. It comprises a doublehyphen;wallhyphen;type fusedhyphen;quartz reactor, a newly designed materialhyphen;gas preheating unit, and three vacuum chambers for dehydrating and exchanging wafers. The preheating unit, used to eliminate temperature disturbances in the reactor, is assembled with a SiC composite shrouded by fused quartz and an infrared lamp heater. The temperature of material gases is quickly elevated to about 600thinsp;deg;C by passing them through this unit just before reaching the reactorrsquo;s gas inlet. Consequently, the temperature of Si wafers in the reactor can be precisely controlled within plusmn;0.15deg; at 800thinsp;deg;C. Moreover, the moisture concentration (humidity) in the reactor is always kept below 1 ppb. By rigorously controlling the growth temperature and ambience, highhyphen;reliability 5.0plusmn;0.05hyphen;nmhyphen;thick oxide films are obtained.
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