Low programming voltage resistive switching in reactive metal/polycrystalline Pr_(0.7)Ca_(0.3)MnO_3 devices

Liu X.; Biju K.P.; Bourim E.M.Park S.Lee W.Shin J.Hwang H.

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Low programming voltage resistive switching in reactive metal/polycrystalline Pr_(0.7)Ca_(0.3)MnO_3 devices

机译：Low programming voltage resistive switching in reactive metal/polycrystalline Pr_(0.7)Ca_(0.3)MnO_3 devices

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The resistive switching (RS) characteristics of PtPr_(0.7)Ca _(0.3)MnO_3 (PCMO)/W devices with a submicron via-hole structure are investigated. Reproducible and stable switching behavior was achieved in voltage sweeping cycles, while the resistance change was more than two orders of magnitude. No forming process was required to induce the RS. Detailed current densityvoltage analysis suggest that the oxidation and reduction reaction of an interfacial WO_x layer by electrochemical migration of oxygen between the W bottom electrode and the PCMO layer plays a crucial role in the RS of the Pt/PCMO/W structures Furthermore, the relatively low programming voltage (±1.5 V), which is significantly less than the values previously reported in chemically reactive metal/PCMO devices, might be ascribed to the thermal-assisted RS and the unique properties of W metal and its oxides in nano-scale devices.

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《Solid State Communications》 |2010年第46期|2231-2235|共5页
作者
Liu X.; Biju K.P.; Bourim E.M.Park S.Lee W.Shin J.Hwang H.;
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作者单位

School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, South Korea;

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正文语种英语
中图分类固体物理学;
关键词
A. Manganites; A. Thin film; D. Interfacial layer; D. Resistive switching;

Low programming voltage resistive switching in reactive metal/polycrystalline Pr_(0.7)Ca_(0.3)MnO_3 devices

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