Stretchable, Transparent Zinc Oxide Thin Film Transistors

Kyungyea Park; Deok-Kyou Lee; Byung-Sung KimHaseokjeonNae-Eung LeeDongmok WhangHoo-Jeong LeeYounjea KimJong-Hyun Ahn

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Stretchable, Transparent Zinc Oxide Thin Film Transistors

机译：Stretchable, Transparent Zinc Oxide Thin Film Transistors

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摘要

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.

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来源
《Advanced functional materials》 |2010年第20期|3577-3582|共6页
作者
Kyungyea Park; Deok-Kyou Lee; Byung-Sung KimHaseokjeonNae-Eung LeeDongmok WhangHoo-Jeong LeeYounjea KimJong-Hyun Ahn;
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作者单位

School of Advanced Materials Science and Engineering SKKU Advanced Institute of Nanotechnology Center for Human Interface Nanotechnology Sungkyunkwan University Suwon, 440-476, Korea;

School of Mechanical Engineering Sungkyunkwan University Suwon, 440-476, Korea;

School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon, 440-476, Korea;

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正文语种英语
中图分类无线电电子学、电信技术;
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Stretchable, Transparent Zinc Oxide Thin Film Transistors

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