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首页> 外文期刊>Solid State Communications >Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice
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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

机译：Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

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We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of similar to 40 nm and density of 3 to 4 x 10(10) cm(-2). The single-layer QDs have photoluminescence (PL) emission centred at 0.78 eV with a linewidth of 64 meV at low temperature (4 K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P-2 pressure before growing the spacer layer. An average P composition of similar to 30 in the resulting InAsP QDs in samples annealed for 50 s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55 mum at 300 K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength. (C) 2001 Elsevier Science Ltd. All rights reserved. References: 20

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