This paper describes the formation of complete gaps in a semiconductor effective-mass carrier density of states, at the conduction or valence band edges of a direct-gap material periodically modulated on a length scale significantly larger than the base crystal interatomic spacing. The specific case of cubic interacting quantum dots of GaAlAs in a GaAs matrix distributed in a zinc-blende structure is examined. We find an interesting similarity between the effective-mass spectral density and the atomic gallium arsenide host electronic structure. The charge carrier density has also been examined in order to explain the strong similarity with atomic GaAs. References: 22
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