Annealing effect on photoluminescence of Tb-doped AlBON films

Masumoto K.; Kimura C.; Aoki H.Sugino T.

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Annealing effect on photoluminescence of Tb-doped AlBON films

机译：Annealing effect on photoluminescence of Tb-doped AlBON films

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摘要

Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb~(4+) ions decrease compared with Tb~(3+) ions after annealing treatment. Oxygen atoms in the AlBON:Tb film are dissociated from Tb and bonded to boron atoms by annealing treatment. It is possible that decrease in Tb~(4+) ions leads to increase in the PL intensity by annealing treatment.

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来源
《Solid State Communications》 |2010年第30期|1396-1399|共4页
作者
Masumoto K.; Kimura C.; Aoki H.Sugino T.;
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作者单位

Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-city, Osaka 5650871, Japan;

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正文语种英语
中图分类固体物理学;
关键词
Luminescence; Rare earth; Semiconductors; X-ray photoelectron spectroscopy;

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Annealing effect on photoluminescence of Tb-doped AlBON films

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