Exciton bound to an ionized donor impurity in GaAsGa_(1-x)Al _xAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

Shi L.; Yan Z.W.

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Exciton bound to an ionized donor impurity in GaAsGa_(1-x)Al _xAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

机译：Exciton bound to an ionized donor impurity in GaAsGa_(1-x)Al _xAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

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摘要

In the framework of perturbation theory, a variational method is used to study the ground state of a donor bound exciton in a weakly prolate GaAsGa _(1-x)Al_xAs ellipsoidal finite-potential quantum dot under hydrostatic pressure. The analytic expressions for the Hamiltonian of the system have been obtained and the binding energy of the bound exciton is calculated. The results show that the binding energy decreases as the symmetry of the dot shape reduces. The pressure and Al concentration have a considerable influence on the bound exciton. The binding energy increases monotonically as the pressure or Al concentration increases, and the influence of pressure or Al concentration is more pronounced for small quantum dot size

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来源
《Solid State Communications》 |2011年第24期|1907-1911|共5页
作者
Shi L.; Yan Z.W.;
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作者单位

School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
A. Ellipsoidal quantum dot; D. Donor bound exciton; D. Hydrostatic pressure;

Exciton bound to an ionized donor impurity in GaAsGa_(1-x)Al _xAs ellipsoidal finite-potential quantum dots under hydrostatic pressure

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